A 70-80-GHz SiGe Amplifier With Peak Output Power of 27.3 dBm

作者：Lin Hsin Chang; Rebeiz Gabriel M

来源：IEEE Transactions on Microwave Theory and Techniques, 2016, 64(7): 2039-2049.

DOI：10.1109/TMTT.2016.2574863

• E-band
• HBT
• millimeter-wave (mm-wave) integrated circuits
• power amplifier (PA)
• silicon germanium (SiGe)

This paper presents a fully integrated 16-way power-combining amplifier for 67-92-GHz applications in an advanced 90-nm silicon germanium HBT technology. The 16-way amplifier is implemented using three-stage common-emitter single-ended power amplifiers (PAs) as building blocks, and reactive lambda/4 impedance transformation networks are used for power combining. The three-stage single PA breakout has a small-signal gain of 22 dB at 74 GHz, and saturation output power (P-sat) of 14.3-16.4 dBm at 68-99 GHz. The power-combining PA achieves a small-signal gain of 19.3 dB at 74 GHz, and P-sat of 25.3-27.3 dBm at 68-88 GHz with a maximum power added efficiency of 12.4%. The 16-way amplifier occupies 6.48 mm(2) (including pads) and consumes a maximum current of 2.1 A from a 1.8 V supply. To the best of our knowledge, this is the highest power silicon-based E-band amplifier to date.

• 出版日期2016-7