Direct synthesis of graphene on SiO2 substrates by chemical vapor deposition

作者：Xu, S. C.^*; Man, B. Y.; Jiang, S. Z.; Chen, C. S.; Yang, C.; Liu, M.; Gao, X. G.; Sun, Z. C.; Zhang, C.

来源：CrystEngComm, 2013, 15(10): 1840-1844.

DOI：10.1039/c3ce27029g

• LARGE-AREA
• FILMS
• TRANSPARENT
• SHEETS
• OXIDE

Continuous and uniform graphene films were directly grown on SiO2 substrates using a chemical vapor deposition system with two-temperature zones assembled. The carbon species from the high temperature zone nucleate in the low temperature zone, initiating the growing process of graphene. The films are predominantly single-layer graphene, with a small percentage of the area having a few layers, whose optical transmittance and electrical conductivity can be comparable with transferred metal-catalyzed graphene. This method avoids the need for either a metal catalyst or a complicated and skilled post growth transfer process and favors the application of graphene as a transparent electrode.

• 出版日期2013
• 单位山东师范大学