Nonvolatile memory device based on SiO2/GaN/AlGaN/GaN heterostructure

作者：Lee J G^*; Choi S; Park B R; Seo K S; Kim H; Cha H Y

来源：Electronics Letters, 2013, 49(8): 529-531.

DOI：10.1049/el.2012.4083

Demonstrated is a nonvolatile memory device based on a SiO2/GaN/AlGaN/GaN heterostructure in which the upper GaN layer acted as a storage node. Charges were stored in and released from the upper GaN layer by applying positive and negative gate biases, respectively. The top SiO2 layer acted as a blocking layer. The threshold voltage shift was similar to 3 V between the program and erase modes and the retention characteristics were very stable over 10000 s.

• 出版日期2013-4-11