Morphology and defect evolution in vapor-grown In2O3:Sn micro-/nanoparticles

作者：Ramos Ramon Jesus Alberto; Leon Sanchez Diego; Herrera Zaldivar Manuel; Pal Umapada^*

来源：Materials Science in Semiconductor Processing, 2015, 40: 943-953.

DOI：10.1016/j.mssp.2015.08.021

• Indium oxide
• Micro- and nanoparticles
• Tin doping
• Raman spectroscopy
• Cathodoluminescence

Sn-doped indium oxide micro- and nanoparticles with different Sn contents (0-15 wt% nominal) were grown by vapor-transport method. Effects of Sn content on the morphology and defect evolution in the crystalline particles were studied using scanning electron microscopy, micro-Raman, cathodoluminescence (CL), and UV-vis optical absorption spectroscopy techniques. It has been observed that Sn doping enhances the direct band gap energy of In2O3 micro-/nanostructures, modifies their morphology and electronic defect structures. By controlling the concentration of Sn, CL emission behavior of In2O3 nanostructures can be controlled systematically.

• 出版日期2015-12