摘要

In this paper we present a semi-analytical thermal stress solution for directional growth of type III-V compounds with small lateral heat flux and weak anisotropy. Both geometric and material anisotropy are considered, and our solution can be applied to crystals grown by various growth techniques such as the Czochralski (Cz) method. The semi-analytical nature of the solution allows us to compute thermal stress in crystals with weak anisotropic effects much more efficiently, compared to a full 3D simulation. Examples are given for crystals pulled in a variety of seed orientations. Our results show that the geometric effect is the dominant one while the effect of material anisotropy on thermal stress is secondary.