A pn heterojunction diode constructed with a n-type ZnO nanowire and a p-type HgTe nanoparticle thin film

作者：Seong Hojun; Cho Kyoungah; Kim Sangsig^*

来源：Applied Physics Letters, 2009, 94(4): 043102.

DOI：10.1063/1.3067861

• dark conductivity
• elemental semiconductors
• II-VI semiconductors
• mercury compounds
• nanoparticles
• ohmic contacts
• photoconductivity
• p-n heterojunctions
• semiconductor quantum wires
• semiconductor thin films
• silicon
• wide band gap semiconductors
• zinc compounds

We demonstrate a pn heterojunction diode constructed with a n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film on a SiO(2)/p-Si substrate. For the pn heterojunction diode, the rectifying characteristics of both the dark current and the photocurrent excited by 633 nm wavelength light were observed, but the photocurrent excited by 325 nm wavelength light possesses Ohmic characteristics. The optoelectronic characteristics of the pn heterojunction diode were compared with those of the ZnO NW and HgTe NP thin film composing it.

• 出版日期2009-1-26