Analysis on the variable junction leakage in MOS transistors due to interaction between two traps

作者：Shin Joonha^*; Jeon Sangbin; Kim Hyun Suk; Yoo Sung Won

来源：Japanese Journal of Applied Physics, 2015, 54(3): 034101.

DOI：10.7567/JJAP.54.034101

In this paper, we analyzed the amplitude of variable junction leakage currents caused by the interaction between two interface states in MOS transistors. For the first time, an analytical equation for the ratio between the junction leakage current before and after electron capture into the slow state was derived with consideration of both the change in the capture cross-section and the electric field. Also, the correct equation for the electric field after electron trapping was derived and used. The distance between the two interface states was extracted from the equation and measurement data. The extracted distance was interpreted under the framework of the inter-atomic distance in the silicon lattice structure at the Si/SiO2 interface.

• 出版日期2015-3