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摘要
This paper presents an analytical breakdown model including self-heating effect (SHE) for NMOSFEF devices. Model evaluation is taken for a wide ambient temperature range, from room temperature to 200 degrees C, It is found that the device self-heating effect is suppressed when ambient temperature is increased, in addition, our results suggest that the conventional MOSFET breakdown model without considering the self-heating effect call overestimate the breakdown characteristics for the short-channel devices.
- 出版日期2000-1
