Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

作者：Jain Geetika; Dalal Ranjeet; Bhardwaj Ashutosh^*; Ranjan Kirti; Dierlamm Alexander; Hartmann Frank; Eber Robert; Demarteau Marcel

来源：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2018, 882: 1-10.

DOI：10.1016/j.nima.2017.10.010

• Silicon detectors
• AC-coupled
• Characterization

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 mu m and strip pitch of 55 mu m. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Omega cm, with a thickness of 300 mu m. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interst

• 出版日期2018-2-21