A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor

作者：Minamiki Tsukuru; Minami Tsuyoshi^*; Kurita Ryoji; Niwa Osamu; Wakida Shin ichi; Fukuda Kenjiro; Kumaki Daisuke; Tokito Shizuo

来源：Materials, 2014, 7(9): 6843-6852.

DOI：10.3390/ma7096843

• organic field effect transistor
• immunosensor
• label-free
• immunoglobulin G
• self-assembled monolayer

A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence of a bovine serum albumin interferent, clearly exhibiting a negative shift in the OFET transfer curve with increasing IgG concentration. This is presumed to be due an interaction between target IgG and the immobilized anti-IgG antibody on the extended-gate electrode. As a result, a linear range from 0 to 10 mu g/mL was achieved with a relatively low detection limit of 0.62 mu g/mL (=4 nM). We believe that these results open up opportunities for applying extended-gate-type OFETs to immunosensing.

• 出版日期2014-9