A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity

作者:Lai Shumei; Mao Danfeng; Huang Zhiwei; Xu Yihong; Chen Songyan; Li Cheng; Huang Wei; Tang Dingliang; Department of Physics Xiamen University; College of Chemistry and Chemical Engineering Xiamen University
来源:Chinese Journal of Semiconductors, 2016, 37(09): 55-60.
DOI:10.1088/1674-4926/37/9/093004

摘要

Plasma treatment and 10% NH4OH solution rinsing were performed on a germanium(Ge) surface.It was found that the Ge surface hydrophilicity after O2 and Ar plasma exposure was stronger than that of samples subjected to N2 plasma exposure. This is because the thin Ge Ox film formed on Ge by O2 or Ar plasma is more hydrophilic than Ge Ox Ny formed by N2 plasma treatment. A flat(RMS < 0:5 nm) Ge surface with high hydrophilicity(contact angle smaller than 3°) was achieved by O2 plasma treatment, showing its promising application in Ge low-temperature direct wafer bonding.