A Facile Route To Recover Intrinsic Graphene over Large Scale

作者：Shin Dong Wook; Lee Hyun Myoung; Yu Seong Man; Lim Kwang Soo; Jung Jae Hoon; Kim Min Kyu; Kim Sang Woo; Han Jae Hee; Ruoff Rodney S; Yoo Ji Beom^*

来源：ACS Nano, 2012, 6(9): 7781-7788.

DOI：10.1021/nn3017603

• graphene
• transistor
• intrinsic properties
• buffed oxide etch (BOE)
• PMMA
• H2O/O-2 redox system
• Fermi level

The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H2O/O-2 redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H2O/O-2 redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H2O/O-2 redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.

• 出版日期2012-9