An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier

作者：Li Chengzhan^*; Chen Zhijian; Huang Jiwei; Wang Yongping; Ma Chuanhui; Yang Hanbing; Liao Yinghao; Zhou Yong; Liu Bin

来源：Chinese Journal of Semiconductors, 2011, 32(3): 035009.

DOI：10.1088/1674-4926/32/3/035009

• Compensation circuits
• GaAs
• GaAs HBT
• Gain variations
• InGaP/GaAs HBT
• Integrated power amplifiers
• On chips
• On-chip temperature
• Output power
• RF amplifiers
• RF power amplifiers
• temperature compensation
• Temperature range
• Temperature variation
• Temperature-compensation circuit
• Thermal characteristics
• Wireless communications

A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented. The simple compensation circuit is composed of one GaAs HBT and five resistors with various values, which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance. It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current. The temperature compensation circuit is applied to a 3-stage integrated power amplifier for wireless communication applications, which results in an improvement in the gain variation from 4.0 to 1.1 dB in the temperature range between -20 and +80 °C.

• 出版日期2011