Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications

作者：Tranchant J^*; Pellaroque A; Janod E; Angleraud B; Corraze B; Cario L; Besland M P

来源：Journal of Physics D: Applied Physics , 2014, 47(6): 065309.

DOI：10.1088/0022-3727/47/6/065309

• H2S/Ar magnetron reactive sputtering
• chalcogenide thin films
• resistive switching
• non-volatile memory
• RRAM
• Mott insulator
• sulfide
• AM(4)Q(8)

The chalcogenide compound GaV4S8 is promising for applications as active materials in non-volatile memory applications. We report here a comprehensive study on the thin-film deposition of this compound using a stoichiometric GaV4S8 target and H2S/Ar reactive sputtering. We show that a fraction of 0.5% to 1% of H2S in the reactive plasma is sufficient to compensate the sulfur deficiency that appears in films deposited in pure Ar plasma. This reactive plasma method allows avoiding the addition of elemental sulfur during the annealing treatment required to obtain a crystallized and stoichiometric GaV4S8 layer. A simple Au/GaV4S8/Au structure presents a resistive switching behaviour well suited for non-volatile memory applications.

• 出版日期2014-2-12