Mid-Infrared HgTe/As2S3 Field Effect Transistors and Photodetectors

作者：Lhuillier Emmanuel; Keuleyan Sean; Zolotavin Pavlo; Guyot Sionnest Philippe^*

来源：Advanced Materials, 2013, 25(1): 137-141.

DOI：10.1002/adma.201203012

• HgTe
• As2S3
• colloidal quantum dot
• inorganic matrix
• field effect transistors
• mid-IR
• photodetection

HgTe colloidal quantum dots (CQD) in an inorganic As2S3 matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.

• 出版日期2013-1-4