Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

作者：Woelz M^*; Kaganer V M; Brandt O; Geelhaar L; Riechert H

来源：Applied Physics Letters, 2011, 98(26): 261907.

DOI：10.1063/1.3604810

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with InxGa1-xN quantum wells inserted to form an axial superlattice. From the omega-2 theta scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the InxGa1-xN quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.

• 出版日期2011-6-27