Atomistic pseudopotential theory of spin relaxation in self-assembled In1-xGaxAs/GaAs quantum dots at zero magnetic field

作者：Wei Hai^*; Gong Ming; Guo Guang Can; He Lixin

来源：Physical Review B, 2012, 85(4): 045317.

DOI：10.1103/PhysRevB.85.045317

An atomistic pseudopotential calculation of the spin-flip time (T-1) of electrons and holes mediated by acoustic phonons in self-assembled In1-xGaxAs/GaAs quantum dots at zero magnetic field is presented. At low magnetic field, the first-order process is suppressed, and the second-order process becomes dominant. It is found that the spin-phonon-interaction-induced spin relaxation time is 100-221 s for electrons, and 4.4-60 ms for holes at 4.2 K. The calculated hole-spin relaxation times are in good agreement with recent experiments, which suggests that the two-phonon process is one of the main relaxation mechanisms for hole-spin relaxation in the self-assembled quantum dots at zero field. The structural and alloy composition effects on the spin relaxation in the quantum dots are clarified.

• 出版日期2012-1-18
• 单位中国科学技术大学