Atomic-scale study of the role of carbon on boron clustering

作者：Philippe T^*; Duguay S; Grob J J; Mathiot D; Blavette D

来源：Thin Solid Films, 2010, 518(9): 2406-2408.

DOI：10.1016/j.tsf.2009.08.022

• Carbon
• Boron
• Clustering
• Laser atom probe tomography

Boron (BF2, 20 keV, 3.14/cm(2)) and carbon (13 keV, 10(15)/cm(2)) implanted silicon annealed at 800 degrees C during 30 min or at 1000 degrees C during 10 s has been investigated using a laser-assisted wide-angle tomographic atom probe (LaWaTAP) instrument. Boron-silicon clusters containing similar to 1 3 at % of boron atoms have been observed in boron implanted silicon with a concentration exceeding the solubility limit. Often identified as BICs. they are interpreted as a metastable phase Furthermore, addition of carbon clearly reduced the clustering of boron. This was interpreted as a diminution of boron diffusion or as an increase of the Solubility limit of boron Carbon-silicon clusters containing similar to 1.

• 出版日期2010-2-26