摘要

Using the principle of silica gel adsorbed-desorbed ozone, a homemade ozone concentrating apparatus was devised, and the high-concentration ozone was used as oxide source in molecular beam epitaxy (MBE) to prepare Bi-based oxide thin films. The concentration (molar fraction) of ozone reached above 95% when the silica gel was kept at about -85 degrees C for 6 h, and can be kept over 5 h when the pressure in concentrating apparatus kept 1.3x 10(3) Pa. X-ray diffraction (XRD) demonstrated that the high-concentration ozone can oxidize Cu to CuO in high vacuum. Furthermore, the oxide source is good enough to prepare high quality Bi2Sr2CuO6+x and Bi2Sr2CaCu2O8+x thin films on the MgO (100) substrates by MBE.