Drift Phenomena of Forward and Reverse Recovery Characteristics in {0001} 4H-SiC p-i-n Diode

作者：Nakayama Koji^*; Sugawaray Yoshitaka; Tsuchida Hidekazu; Kimura Chiharu; Aoki Hidemitsu

来源：Japanese Journal of Applied Physics, 2011, 50(4): 04DF04.

DOI：10.1143/JJAP.50.04DF04

4H-SiC p-i-n diodes fabricated on the (000 (1) over bar) C-face showed smaller forward voltage drift and minimal changes in reverse recovery characteristics after a forward bias stress test compared to those observed on the ( 0001) Si-face. These drift phenomena in 4H-SiC p-i-n diodes could be explained by increased recombination along the perimeter of single Shockley-type stacking faults. It is suggested that the number of single Shockley-type stacking faults significantly decreased in the drift layer fabricated on (000 (1) over bar) C-face in comparison with that on ( 0001) Si-face.

• 出版日期2011-4