Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors

作者：Wenger Ch^*; Lupina G; Lukosius M; Seifarth O; Muessig H J; Pasko S; Lohe Ch

来源：Journal of Applied Physics, 2008, 103(10): 104103.

DOI：10.1063/1.2919573

The achievement of sufficient capacitance-voltage linearity in metal-insulator-metal (MIM) capacitors with high permittivity (high-k) dielectrics is still a challenge, as the origin of the nonlinear behavior is still unclear. Based on fundamental physical mechanisms, such as electrostriction, Coulomb interaction between electrodes, and nonlinear optical effects, a microscopic model, which describes the nonlinearities in capacitance-voltage characteristics of high-k MIM capacitors, will be presented. The extended model, which includes stacked high-k dielectrics and interfacial layers, is able to predict the quadratic voltage capacitance coefficients as a function of the dielectric constant. The calculated coefficients are in suitable agreement with the experimental values of Al(2)O(3)-, Y(2)O(3)-, HfO(2)-, and Pr(2)Ti(2)O(7)-based MIM capacitors.

• 出版日期2008-5-15