Anomalous increase of grain size in Ni-mediated crystallization of amorphous silicon

作者：Oh JH^*; Choi JH; Kim KH; Cheon JH; Jang J

来源：Electrochemical and Solid-State Letters, 2004, 7(11): H52-H54.

DOI：10.1149/1.1807533

We studied the grain growth in Ni-mediated crystallization of amorphous silicon (a-Si) films with various thicknesses. The Ni particles with density of 3.39 x 10(13) cm(-2) was deposited on a-Si and this was annealed at 580 degrees C for 15 min. The grain size of the crystallized poly-Si increases from 25 to 104 mu m as the thickness of a-Si increases from 20 to 300 nm. The grain size has a linear relationship with the a-Si thickness. This can be understood on the basis of the cylindrical seed formation and subsequent cylindrical, lateral grain growth. A cylindrical grain was found in atomic force microscope image of a partially crystallized a-Si after the Secco etch of surrounding a-Si phase.

• 出版日期2004