AgGaGeS4 CRYSTAL AS PROMISING OPTOELECTRONIC MATERIAL

作者：Myronchuk G. L.; Lakshminarayana G.^*; Kityk I. V.; Fedorchuk A. O.; Vlokh R. O.; Kozer V. R.; Parasyuk O. V.; Piasecki M.

来源：Chalcogenide Letters, 2018, 15(3): 151-156.

• Single crystal
• Chalcogenides
• Photoconductivity relaxation kinetics

We have discovered a possibility to use the AgGaGeS4 crystal as a promising optoelectronic material. The photoconductivity relaxation of the AgGaGeS4 crystal in the temperature range 220-300 K was analyzed within the concept of the sticking levels. The presence of long-term photoconductivity relaxation is controlled by s-and r -recombination centers. Determined energy depth of the sticking levels was similar to 0.13 eV.

• 出版日期2018-3