Embedded TFT NAND-type nonvolatile memory in panel

作者：Chen Hung Tse^*; Hsieh Szu I; Lin Chrong Jung; King Ya Chin

来源：IEEE Electron Device Letters, 2007, 28(6): 499-501.

DOI：10.1109/LED.2007.896894

• low-temperature polycrystalline silicon (LTPS)
• metal-oxide-nitride-oxide-silicon (MONOS)
• nonvolatile memory
• sequential lateral solidified (SLS)
• thin-film transistor (TFT)

A new NAND-type nonvolatile memory with a field-enhancing tip structure embedded in low-temperature polycrystalline silicon (UPS) panel was demonstrated on a glass substrate for the first time. A thin-film transistor (TFT) metaloxide-nitride-oxide-silicon (MONOS) device based on sequential lateral solidification crystallization with a fully depleted poly-Si channel, an oxide-nitride-oxide stack gate dielectric, and a metal gate is integrated into a NAND array. A NAND test array based on p-channel LTPS TFTs exhibits good cycling endurance and data retention properties and negligible program and read disturbance. These results strongly support the claim that this TFT-MONOS device is a promising candidate for use in embedded nonvolatile memory for system-on-panel and 3-D IC applications.

• 出版日期2007-6
• 单位清华大学