摘要
Ni(53.97)Mn(25.67)Ga(20.36) high temperature shape memory thin film was deposited onto silicon substrates using radio-frequency magnetron sputtering. Crystallographic structure, surface morphology, compositions and martensitic transformation of Ni-Mn-Ga thin films were investigated by means of X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectrometry, and differential scanning calorimetry. The results show that Ni(53.97)Mn(25.67)Ga(20.36) thin film with excellent surface quality is 7M structure at room temperature. The martensite transformation temperature M, can be increased to 100 degrees C through selecting a suitable composition of the Ni-Mn-Ga target and appropriate sputtering parameters.