科研之友
微信
新浪微博
Facebook
分享链接
摘要
Static I - V characteristic curves for memory switching behavior have been studied as a function of film thickness in the range (67-159 nm) and temperature in the range (293-373 K), for amorphous Se60Ge40 and Se60Ge36In4 chalcogenide thin films. The films are prepared by thermal evaporation of high purity 5 N materials. X-ray diffraction patterns for the studied materials revealed the amorphicity of the prepared films. The I - V characteristic curves display a memory switching at the threshold point from the state of high resistance (OFF state) to state of the negative differential resistance NDRS (ON state). The average values of threshold voltage (V-th) decreased exponentially with increasing temperature and linearly increase with increasing film thickness while they decrease with In addition to Se60Ge40. The average values of the threshold electric field E-th were calculated and were found to decrease with increasing temperature for both the studied compositions. The electrical conduction activation energies Delta E-sigma for Se60Ge40 and Se60Ge36In4 were calculated and found to be 0.269 eV and 0.19 eV respectively. The threshold voltage activation energy Delta epsilon(th) and the ratio (Delta epsilon(th)/Delta E-sigma) were calculated for Se60Ge40 and Se60Ge36In4 and the values of (Delta epsilon(th)/Delta E-sigma) were found to be 0.327 and 0.52 respectively, which supports the electrothermal model. The transition between the Off-State and On-States was attributed to the Joule heating of current channel according to the electrothermal model. The effect of In addition to SeGe on the studied parameters was discussed.
- 出版日期2017-3-30
