Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

作者：Shiojima Kenji; Murase Shingo; Yamamoto Shingo; Mishima Tomoyoshi; Nakamura Tohru

来源：Japanese Journal of Applied Physics, 2016, 55(4): 04EG05.

DOI：10.7567/JJAP.55.04EG05

Nitrogen-ion-implantation damage on GaN has been clearly visualized using scanning internal photoemission microscopy. Ni Schottky contacts were formed on selectively N-ion-implanted n-GaN surfaces at 80 keV with an ion dose of 1 x 10(14) or 1 x 10(15)cm(-2), and a photocurrent was detected by focusing and scanning a laser beam over the contacts. We found that the photocurrent decreased in the implanted regions due to an increase in the Schottky barrier and carrier depletion. Photocurrent maps showed that the induced damage did not spread from the implanted regions within the spatial resolution of the equipment. We confirmed that this method is a powerful tool for mapping implanted highly resistive regions.

• 出版日期2016-4