Limits on vanadium oxide Mott metal-insulator transition field-effect transistors

作者：Hormoz S^*; Ramanathan S

来源：Solid-State Electronics, 2010, 54(6): 654-659.

DOI：10.1016/j.sse.2010.01.006

• Functional oxides
• Phase transitions
• Transistors

There have been numerous proposals for use of metal-oxide materials as an alternative to semiconductors in field-effect transistors (FET), as current Si FET technology inevitably encounters intrinsic scaling limitations. We report on device-independent power-delay characteristics of potential VO(2)-based field induced Mott transistors and compare scaling limits to that of Si. Since the critical electric field for metal-insulator transition (MIT) in VO(2) is similar to the breakdown field of Si, and due to the inherent possibility of further scaling along one direction in VO(2), both materials exhibit similar lower bounds on switching energy. MIT in VO(2) results in free carrier concentration several orders of magnitude larger than that of Si, easily overcoming the carrier transit time limits of conventional semiconductor MOSFETs. VO(2) switching speed is constrained by the kinetics of the phase transition and more importantly limited thermal dissipation. Our simple model predicts an intrinsic VO(2) material lower bound switching time of the order of 0.5 ps at a power transfer of 01 mu W.

• 出版日期2010-6