Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces

作者:Laukkanen P*; Punkkinen M P J; Komsa H P; Ahola Tuomi M; Kokko K; Kuzmin M; Adell J; Sadowski J; Perala R E; Ropo M; Rantala T T; Vayrynen I J; Pessa M; Vitos L; Kollar J; Mirbt S; Johansson B
来源:Physical Review Letters, 2008, 100(8): 086101.
DOI:10.1103/PhysRevLett.100.086101

摘要

First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2 x 1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2 x 1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.