Nonvolatile-Memory Characteristics of AlO--Implanted Al2O3

作者：Kim Min Choul^*; Kim Sung; Choi Suk Ho; Belay K; Elliman R G; Russo S P

来源：IEEE Electron Device Letters, 2009, 30(8): 837-839.

DOI：10.1109/LED.2009.2024440

• Al2O3
• AlO- ion implantation
• deep trap
• nonvolatile-memory (NVM)

The nonvolatile-memory (NVM) characteristics of AlO--implanted Al2O3 structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al2O3, and our calculations show that these levels are likely attributed to the defects in the Al2O3, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.

• 出版日期2009-8