A 0.7 V 850 mu W CMOS LNA FOR UHF RFID READER

作者：Li Jie; Hasan S M Rezaul^*

来源：Microwave and Optical Technology Letters, 2010, 52(12): 2780-2782.

DOI：10.1002/mop.25600

• radio frequency identification
• radio frequency integrated circuits

The design of a narrow-band cascaded CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. Compared to other previously reported narrowband LNA designs, in this work the finite g(ds) (= l/r(0)) effect has been considered to improve the nanometric design, achieving simultaneous impedance and minimum F-min noise matching at a very low power drain of 850 mu W from a 0.7-V supply voltage. The LNA was fabricated using the IBM 130 mu CMOS process delivering a power gain (S-21) of approximate to 12 dB, a reverse isolation (S-12) of approximate to-34 dB, and an input power reflection (S-11@866 MHz) of approximate to-12 dB. It had a minimum pass-hand NF of around 2.2 dB and a 3rd order input referred intercept point (IIP3) of approximate to-9.5 dBm.

• 出版日期2010-12