Heavy-Ion-Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

作者：Javanainen Arto^*; Turowski Marek; Galloway Kenneth F; Nicklaw Christopher; Ferlet Cavrois Veronique; Bosser Alexandre; Lauenstein Jean Marie; Muschitiello Michele; Pintacuda Francesco; Reed Robert A; Schrimpf Ronald D; Weller Robert A; Virtanen A

来源：IEEE Transactions on Nuclear Science, 2017, 64(8): 2031-2037.

DOI：10.1109/TNS.2017.2717045

• Ion radiation effects
• modeling
• power semiconductor devices
• Schottky diodes
• silicon carbide (SiC)

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

• 出版日期2017-8