摘要

We present results from the direct electrical measurement of an as-grown nanowire. The nickel silicide (NiSi) nanowire was spontaneously grown across a trench between two electrodes used for measurement. The NiSi nanowire, 58 nm in diameter and 2.9 mu m in length, showed a low resistance characteristic of 147.9 Omega. This unique method is straightforward and does not require removal of a grown nanowire to be moved into a measurement environment.

  • 出版日期2006-7-12