Deposition of K-doped p type ZnO thin films on (0001) Al2O3 substrates

作者：Jun Wu^*; Yang Yintang

来源：Materials Letters, 2008, 62(12-13): 1899-1901.

DOI：10.1016/j.matlet.2007.10.035

• zinc oxide
• thin films
• deposition
• potassium
• radio frequency magnetron sputtering

To study the possibility of group-1 elements asp type dopants, potassium (K) has been used to prepare p-ZnO thin films deposited on (000 1) Al2O3 substrates by radio frequency magnetron sputtering technique. The electrical and structure properties of as-grown films have been mainly investigated using Hall measurement, X-ray diffraction (XRD), atom force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The K-doped ZnO films exhibit p type conductivity, and the best sample is obtained at 500 degrees C substrate temperature and 30% oxygen partial pressure with a hole carrier concentration of 8.92 x 10(17) cm(-3), resistivity of 1.8 Omega cm, and hole mobility of 3.89 cm(2)/V s. One dense and uniform surface is also observed from the K-doped films with an average grain size of 8.3 nm and surface roughness of 98.3 nm. The ratio of Zn, 0 and K atoms in films is 1:1.75:0.06.

• 出版日期2008-4-30
• 单位西安电子科技大学