Non-volatile memory with self-assembled ferrocene charge trapping layer

作者：Zhu Hao; Hacker Christina A; Pookpanratana Sujitra J; Richter Curt A; Yuan Hui; Li Haitao; Kirillov Oleg; Ioannou Dimitris E; Li Qiliang^*

来源：Applied Physics Letters, 2013, 103(5): 053102.

DOI：10.1063/1.4817009

A metal/oxide/molecule/oxide/Si capacitor structure containing redox-active ferrocene molecules has been fabricated for non-volatile memory application. Cyclic voltammetry and X-ray photoelectron spectroscopy were used to measure the molecules in the structure, showing that the molecules attach on SiO2/Si and the molecules are functional after device fabrication. These solid-state molecular memory devices have fast charge-storage speed and can endure more than 10(9) program/erase cycles. This excellent performance is derived from the intrinsic properties of the redox-active molecules and the hybrid Si-molecular device structure. These molecular devices are very attractive for future high-level non-volatile memory applications.

• 出版日期2013-7-29