Microstructural defects in He-irradiated polycrystalline alpha-SiC at 1000 degrees C

作者：Han, Wentuo; Li, Bingsheng^*

来源：Journal of Nuclear Materials, 2018, 504: 161-165.

DOI：10.1016/j.jnucmat.2018.03.038

• Silicon carbide
• He irradiation
• Microstructure
• Grain boundaries
• Stacking faults

In order to investigate the effect of the high-temperature irradiation on microstructural evolutions of the polycrystalline SiC, an ion irradiation at 1000 degrees C with the 500 keV He2+ was imposed to the alpha-SiC. The platelets, He bubbles, dislocation loops, and particularly, their interaction with the stacking fault and grain boundaries were focused on and characterized by the cross-sectional transmission electron microscopy (XTEM). The platelets expectably exhibit a dominant plane of (0001), while planes of (01-10) and (10-16) are also found. Inside the platelet, the over-pressurized bubbles exist and remarkably cause a strong-strain zone surrounding the platelet. The disparate roles between the grain boundaries and stacking faults in interacting with the bubbles and loops are found. The results are compared with the previous weighty findings and discussed.

• 出版日期2018-6
• 单位中国科学院近代物理研究所; 北京科技大学