alpha-Quaterthiophene-polyethylene blends: Phase behaviour and electronic properties

作者：Wolfer Pascal; Mueller Christian; Smith Paul; Baklar Mohammed A; Stingelin Stutzmann Natalie^*

来源：Synthetic Metals, 2007, 157(21): 827-833.

DOI：10.1016/j.synthmet.2007.08.014

• alpha-quaterthiophene
• blends
• field-effect transistor (FET)

We demonstrate that blending alpha-quaterthiophene (4T) with high-density polyethylene (HDPE) under judiciously chosen processing conditions allows preparation of continuous thin films of insulator content as high as 90 wt% without considerably sacrificing the electronic properties of the semiconducting species, as measured in field-effect transistors (FETs). Similar behaviour was recently reported for all-polymeric crystalline-crystalline semiconducting blends such as poly(3-hexylthiophene):HDPE. However, while that previous work focussed on the sequence in which the two components crystallize, we show here that for the present small molecule:polymer binaries - in addition to the crystallization sequence - the extent of solid-solid phase separation that occurs during blend preparation strongly affects the electronic properties of the active layers.

• 出版日期2007-10