Analog resistive switching behavior of Al/Nb2O5/Al device

作者：Maehne H^*; Wylezich H; Hanzig F; Slesazeck S; Rafaja D; Mikolajick T

来源：Semiconductor Science and Technology, 2014, 29(10): 104002.

DOI：10.1088/0268-1242/29/10/104002

• niobium pentoxide
• RRAM
• memristor
• analog switching
• resistive switching
• platinum-free

Resistive switching effects in metal-insulator-metal (MIM) structures are strongly influenced by the electrode materials. In this work a platinum-free symmetric Al/Nb2O5/Al device is compared to a device with platinum bottom electrode. For the device with the platinum bottom electrode, filamentary based resistive switching with good data retention was observed up to 125 degrees C. For the Al/Nb2O5/Al device, an area dependent pure electronic based resistive switching was observed. Electron trapping at the bottom electrode interface is responsible for the observed analog switching behavior which makes an Al/Nb2O5/Al device suitable for neuromorphic applications.

• 出版日期2014-10