Atomic scale microstructures of high-k HfSiO thin films fabricated by magnetron sputtering

作者：Talbot Etienne^*; Roussel Manuel; Khomenkova Larysa; Gourbilleau Fabrice; Pareige Philippe

来源：Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2012, 177(10): 717-720.

DOI：10.1016/j.mseb.2011.10.011

• Hafnium silicates
• Silicon nanoclusters
• High-k dielectric
• Magnetron sputtering
• Atom probe tomography
• Transmission electron microscopy

High-k hafnium-silicate films were deposited by RF magnetron sputtering approach on silicon wafer. The microstructure has been investigated using the combination of transmission electron microscopy and atom probe tomography. It was evidenced that the elaborated HfSiO thin films subsequently annealed at 950 degrees C during 15 min leads to a complex phase separated nanostructure where silica, hafnia and silicon nanoclusters coexist. The formation of silicon nanoclusters in hafnia-based host was never reported before. The results demonstrate the capability of RF magnetron sputtering to pave the way for realization of nanomemory devices based on silicon clusters embedded in high-k matrix.

• 出版日期2012-6-5
• 单位中国地震局