Doping Effects of Sb, Bi, Zr and Si on the Properties of YAG:Ce Phosphor

作者：Sun Xia Wei; Tan Jin^*; Li Cong Ming; Lei Ting; Meng Xiao Kang; Yan Wei; Zhang Wei; Feng Shan

来源：Chinese Journal of Inorganic Chemistry, 2013, 29(9): 1863-1869.

DOI：10.3969/j.issn.1001-4861.2013.00.241

• YAG:Ce
• phosphors
• Co-deped
• energy transmission
• oxygen vacancy

The Sb3+, Bi3+, Zr4+ and Si4+ doped YAG:Ce yellow phosphors were synthesized by high temperature solid-state method. The doping effect and the related mechanism of Sb3+, Bi3+, Zr4+ and Si4+ on the luminescence intensity of YAG:Ce were studied. The results show that the luminescence intensity firstly increases with the increases of the Sb3+, Bi3+, Zr4+ and Si4+ concentration, then decreases. The energy transfer from Sb3+ and Bi3+ to Ce3+ took the mechanism of the multipolar interactions, which leads the improvements of the emission intensity about 35.5% at 0.5 mmol for Sb3+ and 44.8% at 0.1 mmol for Bi3+, respectively. The additions of Zr4+ and Si4+ promote further reduction of Ce4+ to Ce3+, owing to spontaneous charge compensation. The highest emission intensity is obtained at the concentrations of Zr4+ and Si4+ of 0.3 mmol and 7 mmol, which is increased by 27.4% and 31.2%, respectively. With the doping of Sb3+, Bi3+, Zr4+ and Si' elements, the growth of phosphor particle is improved, resulting in the enhancement of phosphors emission.

• 出版日期2013-9-10
• 单位中国地质大学（北京）