Design study of neutron flux intensity monitor between ten and several hundred keV for BNCT

作者：Guan, Xingcai^*; Murata, Isao; Wang, Tieshan

来源：Journal of Nuclear Science and Technology, 2016, 53(8): 1112-1119.

DOI：10.1080/00223131.2015.1092400

• neutrons between ten and several hundred keV
• neutron flux intensity
• activation method
• Monte Carlo simulation
• GaN wafer
• BNCT

Based on the activation method using Ga-71(n,gamma)Ga-72 reaction, two spherical monitors with gallium nitride (GaN) wafers as activation material were designed by Monte Carlo simulations to precisely measure the absolute integral neutron flux intensity between ten and several hundred keV. The two monitors are almost the same in shape and have an absorber/moderator/absorber/GaN arrangement from outside to inside. The differences between the two monitors are the kind of materials, the thicknesses of the absorbers and the diameter of the moderator. By making difference of the sensitivities between these two monitors, the contributions of thermal, epithermal and very high energy fast neutrons were removed completely, and constant monitor sensitivity to neutrons between ten and several hundred keV was extracted. The simulation results and related analysis indicated that the absolute integral neutron flux intensity between ten and several hundred keV could be precisely measured by the presently designed two monitors.

• 出版日期2016
• 单位兰州大学