Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

作者：Benvegnu Agostino^*; Bisi Davide; Laurent Sylvain; Meneghini Matteo; Meneghesso Gaudenzio; Barataud Denis; Zanoni Enrico; Quere Raymond

来源：International Journal of Microwave and Wireless Technologies, 2016, 8(4-5): 663-672.

DOI：10.1017/S1759078716000398

• Deep level transient spectroscopy (DLTS)
• Transcondutance frequency dispersion
• Output conductance frequency dispersion
• Defects
• Gallium nitride
• High electron mobility transistor (HEMT)
• Trap levels

This paper presents a detailed trap investigation based on combined pulsed I/V measurements, drain current transient (DCT) measurements and low-frequency dispersion measurements of transconductance (LF Y-21) and output conductance (LF Y-22). DCT characterization is carried out over a 7-decade time scale. LF Y-21 and Y-22 measurements are carried out over the frequency range from 100 Hz to 1 GHz. These combined measurements were performed at several temperatures for AlGaN/GaN high electron mobility transistors under class AB bias condition and allowed the extraction of the activation energy (E-a) and the capture cross section (sigma(c)) of the identified traps. Extensive measurements of these characteristics as a function of device bias are reported in this work to understand the dynamic trap behavior. This paper demonstrated a correlation between LF small-signal (LF Y-21 and Y-22) and large-signal voltage steps (DCT) results. These measurements allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.

• 出版日期2016-6