科研之友
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摘要
A novel structure of tunnel field-effect transistor (FET) is introduced with the gate composed of three segments of different work functions. The tunnel current is controlled by an in channel potential barrier as well as the source-channel tunnel junction bandgap, which combines the merits of both bandgap-controlled tunnel FET and barrier-controlled traditional MOSFET. Intuitive explanation is provided for this novel device structure. The performance enhancement is confirmed by numerical simulation with carbon nanotube as the channel material. This structure is especially suitable for bandgap tunable ballistic transport materials (e.g., carbon nanotube and graphene nanoribbon).
