摘要

A simple two-step hydrothermal method was used to successfully fabricate a well-grown beta-Ga2O3 micro-rod array from GaOOH on a Si (100) substrate without other heterogeneous layers, to overcome the relatively large surface energy. Different hydrothermal conditions were used to investigate the growth mechanism of the beta-Ga2O3/GaOOH micro-rod array on the silicon substrate. Most significantly, the key role of ethanol in the first-step hydrothermal solution is discussed in light of the change in the adsorption of growing nuclei at the solid-liquid interface.