摘要

A molecular dynamics simulation for the condensation of vapour on a solid wall was carried out to study the growth of the condensation film. The results show that with the increase in the vapour temperature, the temperature jump and the temperature gradient increase, however, the depth of the potential well and the absolute value of the potential force in the interfacial region decrease. The film growth rate is about 0.96 m/s at 120 K, and will increase nearly linearly with increasing vapour temperature. In addition, the mass flux also increases because larger temperature difference has strengthened the condensation process.