High resolution nanotopography characterization at die scale of 28 nm FDSOI CMOS front-end CMP processes

作者：Dettoni F^*; Rivoire M; Gaillard S; Hinsinger O; Bertin F; Beitia C

来源：Microelectronic Engineering, 2014, 113: 105-108.

DOI：10.1016/j.mee.2013.08.001

• Chemical mechanical polishing
• Characterization
• Die-level
• Metrology
• T-box
• Within die non-uniformity

This work concerns high resolution topography characterization at die scale of 28 nm FDSOI CMOS technology by interferometric microscopy. It shows that usual test boxes (T-boxes) in scribe line are not representative of the full die topography. Consequently, new parameters are needed in order to take full advantage of high resolution topography characterization at die scale. In that sense, it is observed in this study that coupling full die and die sigma ranges can provide new and relevant information about the Chemical Mechanical Polishing (CMP) processes. Moreover, high resolution die topography data makes possible to characterize in-die impact of a structure on its neighborhood and evaluate the pattern density dependency of the CMP processes.

• 出版日期2014-1
• 单位中国地震局