Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

作者：El Atab Nazek^*; Alqatari Samar; Oruc Feyza B; Souier Tewfic; Chiesa Matteo; Okyay Ali K; Nayfeh Ammar

来源：AIP Advances, 2013, 3(10): 102119.

DOI：10.1063/1.4826583

A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80 degrees C exhibited the highest on/off ratio with a turn-on voltage (V-ON) similar to 3.5 V. The measured breakdown voltage (V-BR) and electric field (E-BR) for this diode are 5.4 V and 3.86 MV/cm, respectively.

• 出版日期2013-10