ACCURATE MODELING OF MINIMUM NOISE FIGURE IN ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS

作者：Xu, Y.^*; Guo, Y.; Wu, Y.; Xu, R.; Yan, B.; Lin, W.

来源：Journal of Electromagnetic Waves and Applications, 2011, 25(5-6): 819-832.

DOI：10.1163/156939311794827267

• FIELD-EFFECT TRANSISTORS
• GALLIUM NITRIDE
• HEMTS
• PERFORMANCE
• BAND
• EQUATION
• DEVICES
• POWER
• FETS
• RF

The periodical nonlinear characteristic of minimum noise figure (F-min) versus frequency in AlGaN/GaN HEMT is studied by using support vector regression (SVR) and the empirical Van der Zeil-Pucel (PUCEL) model in this paper. The black box model based on SVR is used to accurately describe the function of F-min(f). And an improved PUCEL model is proposed to characterize the nonlinear characteristic of F-min(f). In the proposed model, the delays of transconductance g(m), output conductance g(ds), and source parasitic impedance R-s are considered. The calculated results by using SVR model, improved PUCEL model, and quasi-linear model are compared with measurement ones, which reveal that the periodical nonlinear characteristic is mainly caused by the delay of R-s.

• 出版日期2011
• 单位电子科技大学