Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects

作者：Marin E G^*; Ruiz F G; Tienda Luna I M; Godoy A; Gamiz F

来源：Solid-State Electronics, 2014, 92: 28-34.

DOI：10.1016/j.sse.2013.10.022

• III-V semiconductor materials
• Compact modeling
• Threshold voltage
• Nanowires

In this work we propose an analytical model for the threshold voltage (V-T) of III-V cylindrical nanowires, that takes into consideration the two dimensional quantum confinement of the carriers, the Fermi-Dirac statistics, the wave-function penetration into the gate insulator and the non-parabolicity of the conduction band structure. A simple expression for V-T is obtained assuming some suitable approximations. The model results are compared to those of a 2D self consistent Schrodinger-Poisson solver, demonstrating a good fit for different III-V materials, insulator thicknesses and nanowire sizes with diameter down to 5 nm. The V-T dependence on the confinement effective mass is discussed. The different contributions to V-T are analyzed showing significant variations among different III-V materials.

• 出版日期2014-2