Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer

作者：Rizzi F^*; Edwards P R; Bejtka K; Semond F; Gu E; Dawson M D; Watson I M; Martin R W

来源：Superlattices and Microstructures, 2007, 41(5-6): 414-418.

DOI：10.1016/j.spmi.2007.03.031

• GaN
• InGaN
• AlInN
• quantum well
• microcavity
• wet etching
• reflectance
• cathodoluminescence
• photoluminescence

We describe the fabrication and optical properties of a 3 lambda/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing, GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.

• 出版日期2007-6